View IXGH48N60B3C1_4614696.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGH48N60B3C1
VCES IC110 VCE(sat) tfi(typ)
= = =
600V 48A 1.8V 116ns
Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching
TO-247
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by Leads) TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped Inductive Load TC = 25C
Maximum Ratings 600 600 20 30 75 48 20 280 ICM = 120 @ VCES 300 -55 ... +150 150 -55 ... +150 W C C C C C Nm/lb.in. g V V V V A A A A A Features Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package Advantages High Power Density Low Gate Drive Requirement Applications G = Gate E = Emitter C = Collector TAB = Collector G C
( TAB )
E
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque
300 260 1.13/10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES, VGE = 0V TJ = 125C VCE = 0V, VGE = 20V IC = 32A, VGE = 15V, Note 1
Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V
50 A 1.75 mA 100 nA 1.8 V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100140A(06/09)
IXGH48N60B3C1
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 28 46 3980 VCE = 25V, VGE = 0V, f = 1MHz 190 45 115 IC = 40A, VGE = 15V, VCE = 0.5 * VCES 21 40 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 480V, RG = 5 Note 2 22 26 0.45 130 116 0.66 Inductive Load, TJ = 125C IC = 30A, VGE = 15V VCE = 480V, RG = 5 Note 2 22 26 0.50 190 157 1.30 0.21 200 200 1.20 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W
Dim.
e P
TO-247 (IXGH) Outline
gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS
IC = 30A, VCE = 10V, Note 1
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF RthJC IF = 20A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V
0.90 C/W
Notes
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH48N60B3C1
Fig. 1. Output Characteristics @ 25C
80 70 60 VGE = 15V 13V 11V 300 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25C
9V
250
IC - Amperes
50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 7V
IC - Amperes
200 9V 150
100 7V
50 5V 0 0 2 4
6
8
10
12
14
16
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
80 70 60 VGE = 15V 13V 11V 1.4 1.3 1.2 1.1 VGE = 15V
Fig. 4. Dependence of VCE(sat) on Junction Temperature
9V
IC - Amperes
50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
7V
VCE(sat) - Normalized
I
C
= 80A
I 1.0 0.9 0.8 0.7
C
= 40A
5V
I
C
= 20A
2.8
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
3.6 TJ = 25C 3.2 I 2.8
C
Fig. 6. Input Admittance
200 180 160
IC - Amperes
VCE - Volts
= 80A 40A 20A
140 120 100 80 60 40 20 TJ = 125C 25C - 40C
2.4
2.0
1.6
1.2 5 6 7 8 9 10 11 12 13 14 15
0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGH48N60B3C1
Fig. 7. Transconductance
80 TJ = - 40C 70 60 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 16 VCE = 300V I C = 40A I G = 10mA
Fig. 8. Gate Charge
25C 125C
g f s - Siemens
40 30 20 10 0
IC - Amperes
VGE - Volts
50
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 140 120
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
Cies 1,000 100
IC - Amperes
80 60 40 20 0 100
Coes 100
TJ = 125C RG = 5 dV / dt < 10V / ns
f = 1 MHz
10 0 5 10 15 20 25
Cres
30
35
40
200
300
400
500
600
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance for IGBT
1.00
Z (th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_48N60B3C1(5D)6-03-09
IXGH48N60B3C1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
6 Eoff 5 VCE = 480V Eon 3.0 3.5 3.0 2.5 I 3
C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
3.5 Eoff VCE = 480V Eon
--2.5
TJ = 125C , VGE = 15V
----
3.0 2.5
RG = 5 , VGE = 15V
Eoff - MilliJoules
= 60A 1.5
Eoff - MilliJoules
4
2.0
E on - MilliJoules
Eon - MilliJoules
2.0 1.5 TJ = 125C 1.0 0.5 0.0 15 20 25 30 35 40 45 50 55 60 TJ = 25C
2.0 1.5 1.0 0.5 0.0
2
I C = 30A
1.0
1 I C = 15A 5 10 15 20 25 30 35 40 45 50
0.5
0
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
4.0 3.6 3.2 2.8 Eoff VCE = 480V I 2.4 2.0 1.6 1.2 0.8 0.4 0.0 25 35 45 55 65 75 85 95 105 115 I C = 30A I C = 15A
C
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
2.0 220 210 200 650 1.8 1.6
Eon
----
tfi
VCE = 480V
td(off) - - - -
600 550
RG = 5 , VGE = 15V
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
Eoff - MilliJoules
= 60A
t f i - Nanoseconds
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 125
190 180 170 160 150 140 130 120 5 10 15 I
500 450 I
C
Eon - MilliJoules
= 60A
400 350
I = 15A
C
= 30A
300 250
C
200 150
20
25
30
35
40
45
50
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
220 200 180 160 140 120 100 80 15 20 25 30 35 40 45 50 55 60 240 200 190 220 200 180 160 140 120 100 180
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
220
tf i
VCE = 480V TJ = 125C
td(off) - - - -
tf i
VCE = 480V I
td(off) - - - -
210 200
RG = 5 , VGE = 15V
RG = 5 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
t f i - Nanoseconds
170 160 150 140 130 120 110 100 25
190
C = 60A, 15A
180 170 160
I
C = 30A
150 140 I C = 60A, 15A 130 120 125
TJ = 25C
35
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGH48N60B3C1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
120 75 80 70 60
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
32 70
tr i
100 VCE = 480V
td(on) - - - I
C
TJ = 125C, VGE = 15V
= 60A
65 60 55 50 45
tr i
VCE = 480V
td(on) - - - TJ = 25C, 125C
30 28 26 24 22 20 18 16
RG = 5 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
t r - Nanoseconds
80
50 40 30 20 10 0 15 20 25 30 35 40 45 50 55 60
60 I
C
= 30A
40 35 30
40
20 I 0 5 10 15 20 25 30 35 40 45 50
C
25 = 15A 20 15
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
65 30 50
Fig. 21. Forward Current vs. Forward Voltage
55
I C = 60A
tr i
VCE = 480V
td(on) - - - -
28
RG = 5 , VGE = 15V 26
40 TJ = 25C
t d(on) - Nanoseconds
t r i - Nanoseconds
45
IF - Amperes
30
TJ = 125C
35 I C = 30A 25
24
20
22
15 I 5 25 35 45 55 65 75 85 95 105 115
C
20 = 15A 18 125
10
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
TJ - Degrees Centigrade
VF - Volts
Fig. 22. Maximum Transient Thermal Impedance for Diodes
1.000
0.100
Z (th)JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_48N60B3C1(5D)6-03-09

▲Up To Search▲

Price & Availability of IXGH48N60B3C1

	To Download IXGH48N60B3C1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .